High-resolution electrical and chemical characterization of nm-scale organic and inorganic devices

Almost ever since the advent of the microelectronics adventure, silicon-based MOSFET (metal–oxide–semiconductor fieldeffect transistor) technology has been largely dominant. However, for a few years now this technology has exhibited some fundamental limitations in tackling the increasingly challenging issues of miniaturization and improvements in processing speed and power consumption. Hence, new inorganic semiconductor materials (Ge, InGaAs, InP, InSb, GaN, GaSb, SiC, etc.) and new architectures (multiple-gate FETs, nanowire T-FETs, etc.) are being progressively introduced.